Publications

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1998

Talyansky, V, R.D Vispute, Ramamoorthy Ramesh, R.P Sharma, T Venkatesan, Y.X Li, L.G Salamanca-Riba, M.C Wood, R.T Lareau, K.A Jones, and A.A Iliadis."Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire."Thin Solid Films 323 (1998) 37-41. DOI
Ogale, S.B, K Ghosh, S.P Pai, M Robson, E Li, I Jin, R.L Greene, Ramamoorthy Ramesh, T Venkatesan, and M Johnson."Fe3O4/SrTiO3/La0.7Sr 0.3MnO3 heterostructure: Growth and properties."Materials Science and Engineering B 56 (1998) 134-139. DOI
Venkatesan, T, R.P Sharma, Ramamoorthy Ramesh, Y.G Zhao, Insik Jin, S.B Ogale, M Rajeswari, H Zhang, J.R Liu, W.K Chu, Boyed Veal, A Paulikas, H Zheng, C.H Lee, W.L Cao, and Bozovic D."Femto-second photoimpedance response and dynamic structural distortions in YBCO samples."Proceedings of SPIE - The International Society for Optical Engineering 3481 (1998) 44-59.
Stanishevsky, A, S Aggarwal, A.S Prakash, J Melngailis, and Ramamoorthy Ramesh."Focused ion-beam patterning of nanoscale ferroelectric capacitors."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (1998) 3899-3902.
Gu, J.Y, S.B Ogale, M Rajeswari, T Venkatesan, Ramamoorthy Ramesh, V Radmilovic, U Dahmen, G Thomas, and T.W Noh."In-plane grain boundary effects on the magnetotransport properties of La0.7Sr0.3MnO3-δ."Applied Physics Letters 72 (1998) 1113-1115. DOI
Ogale, S.B, K Ghosh, J.Y Gu, R Shreekala, S.R Shinde, M Downes, M Rajeswari, R.P Sharma, R.L Greene, T Venkatesan, Ramamoorthy Ramesh, R Bathe, S.I Patil, R Ravikumar, S.K Arora, and G.K Mehta."Influence of 90 MeV oxygen ion induced disorder on the magnetotransport in epitaxial La0.7Ca0.3MnO3 thin films."Journal of Applied Physics 84 (1998) 6255-6261. DOI
Ryen, L, C Kwon, M Robson, Ramamoorthy Ramesh, and E Olsson."Influence of strain and annealing on microstructure and magnetic/electric properties of epitaxial (001) La0.70Ba0.30MnO3 films."Doktorsavhandlingar vid Chalmers Tekniska Hogskola (1998) 1-16.
Friessnegg, T, S Aggarwal, B Nielsen, Ramamoorthy Ramesh, D.J Keeble, and E.H Poindexter."Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation."IEEE International Symposium on Applications of Ferroelectrics (1998) 147-150.
Aggarwal, S, A.S Prakash, T.K Song, S Sadashivan, A.M Dhote, B Yang, Ramamoorthy Ramesh, Y Kisler, and S.E Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics 19 (1998) 159-177. DOI
Park, J.-H, E Vescovo, H.-J Kim, C Kwon, Ramamoorthy Ramesh, and T Venkatesan."Magnetic properties at surface boundary of a half-metallic ferromagnet La0.7Sr0.3MnO3."Physical Review Letters 81 (1998) 1953-1956. DOI
Ogale, S, K Ghosh, R Sharma, R Greene, Ramamoorthy Ramesh, and T Venkatesan."Magnetotransport anisotropy effects in epitaxial magnetite thin films."Physical Review B - Condensed Matter and Materials Physics 57 (1998) 7823-7828. DOI
Venkatesan, T, M Rajeswari, Z.-W Dong, S.B Ogale, and Ramamoorthy Ramesh."Manganite-based devices: Opportunities, bottlenecks and challenges."Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 356 (1998) 1661-1680. DOI
Li, H, B Yang, A Dhote, S Aggarwal, L Salamanca-Riba, and Ramamoorthy Ramesh."Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors."Materials Research Society Symposium - Proceedings 493 (1998) 171-176.
Gruverman, A, S.A Prakash, S Aggarwal, Ramamoorthy Ramesh, O Auciello, and H Tokumoto."Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy."Materials Research Society Symposium - Proceedings 493 (1998) 53-58.
Auciello, O, A Gruverman, H Tokumoto, S.A Prakash, S Aggarwal, and Ramamoorthy Ramesh."Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films."MRS Bulletin 23 (1998) 33-41.
Dong, Z.W, S.P Pai, Ramamoorthy Ramesh, T Venkatesan, M Johnson, Z.Y Chen, A Cavanaugh, Y.G Zhao, X.L Jiang, R.P Sharma, S Ogale, and R.L Greene."Novel high-Tc transistors with manganite oxides."Journal of Applied Physics 83 (1998) 6780-6782. DOI
Bernhard, J.M, A Rouse, E.D Sosa, D.E Golden, B.R Chalamala, S Aggarwal, B.E Gnade, and Ramamoorthy Ramesh."Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings."Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (1998) 32-33.
Aggarwal, S, and Ramamoorthy Ramesh."Point defect chemistry of metal oxide heterostructures."Annual Review of Materials Science 28 (1998) 463-499. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, P Shuk, M Greenblatt, Ramamoorthy Ramesh, and A.L Roytburd."Polydomain formation in epitaxial PbTiO3 films."Scripta Materialia 39 (1998) 1435-1441. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, Ramamoorthy Ramesh, A.L Roytburd, P Shuk, and M Greenblatt."Polydomain structure of epitaxial PbTiO3 films on MgO."Materials Research Society Symposium - Proceedings 493 (1998) 111-116.
Ghosh, K, S.B Ogale, S.P Pai, M Robson, E Li, I Jin, Z.-W Dong, R.L Greene, Ramamoorthy Ramesh, T Venkatesan, and M Johnson."Positive giant magnetoresistance in a Fe3O4/SrTiO3/La0.7Sr 0.3MnO3 heterostructure."Applied Physics Letters 73 (1998) 689-691. DOI
Ramesh, Ramamoorthy."Process integration of PZT thin films with oxide electrodes for high density nonvolatile memories."Integrated Ferroelectrics 20 (1998) 69. DOI
Auciello, O, C.M Foster, and Ramamoorthy Ramesh."Processing technologies for ferroelectric thin films and heterostructures."Annual Review of Materials Science 28 (1998) 501-531. DOI
Song, T.K, J Ahn, B Yang, S Aggarwal, and Ramamoorthy Ramesh."Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories."Journal of the Korean Physical Society 32 (1998) S1721-S1723.
Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics 2 (1998) 171-179. DOI