Publication Type:Conference Paper
Source:IEEE International Symposium on Applications of Ferroelectrics, IEEE, Piscataway, NJ, United States, p.147-150 (1998)
Keywords:cooling, Crystal defects, Dielectric films, Doping (additives), Doppler effect, Ferroelectric materials, film growth, Lanthanum, Lead compounds, oxygen, Partial pressure, Positron annihilation, thin films, Vacancy-related defects
The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes.
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