Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation

Publication Type:

Conference Paper

Source:

IEEE International Symposium on Applications of Ferroelectrics, IEEE, Piscataway, NJ, United States, p.147-150 (1998)

Abstract:

The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes.

Notes:

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