Publication Type:Conference Paper
Source:Materials Research Society Symposium - Proceedings, MRS, Warrendale, PA, United States, Volume 493, p.171-176 (1998)
Keywords:Ceramic capacitors, Coercive force, Correlation methods, Domain structure, Ferroelectric materials, microstructure, Textures, thin films, titanium compounds
Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: PLZT//LSCO//Pt// Ti(Al)N//Si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a  texture.
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