Novel high-Tc transistors with manganite oxides

Journal Article

Dong, Z.W., S.P. Pai, Ramamoorthy Ramesh, T. Venkatesan, M. Johnson, Z.Y. Chen, A. Cavanaugh, Y.G. Zhao, X.L. Jiang, R.P. Sharma, S. Ogale, R.L. Greene

10.1063/1.367764

One viable approach for transistor-like high-Tc three terminal devices is the quasiparticle injection device (QPID). We have fabricated Au/YBa2Cu3O7/LaAlO3/Nd 0.7Sr0.3MnO3 (NSMO) and Au/YBa 2Cu3O7/LaAlO3/LaNiO3 (LNO) heterostructures on (100) LaAlO3 substrates by pulsed laser deposition for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of the injection of spin-polarized quasiparticles from a ferromagnetic NSMO gate was compared to that of unpolarized quasiparticles from a nonmagnetic metallic LNO gate. A current gain greater than nine has been attained for spin-polarized QPIDs, which is an order of magnitude larger than the gain of spin unpolarized QPIDs. Such large effects could be useful in a variety of active high-Tc/colossal magnetoresistance heterostnicture devices. © 1998 American Institute of Physics.

Journal of Applied Physics

83

1998

00218979

Ramesh Lab