Novel high-Tc transistors with manganite oxides
Publication Type
Journal Article
Authors
Dong, Z.W., S.P. Pai, Ramamoorthy Ramesh, T. Venkatesan, M. Johnson, Z.Y. Chen, A. Cavanaugh, Y.G. Zhao, X.L. Jiang, R.P. Sharma, S. Ogale, R.L. Greene
DOI
Abstract
One viable approach for transistor-like high-Tc three terminal devices is the quasiparticle injection device (QPID). We have fabricated Au/YBa2Cu3O7/LaAlO3/Nd 0.7Sr0.3MnO3 (NSMO) and Au/YBa 2Cu3O7/LaAlO3/LaNiO3 (LNO) heterostructures on (100) LaAlO3 substrates by pulsed laser deposition for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of the injection of spin-polarized quasiparticles from a ferromagnetic NSMO gate was compared to that of unpolarized quasiparticles from a nonmagnetic metallic LNO gate. A current gain greater than nine has been attained for spin-polarized QPIDs, which is an order of magnitude larger than the gain of spin unpolarized QPIDs. Such large effects could be useful in a variety of active high-Tc/colossal magnetoresistance heterostnicture devices. © 1998 American Institute of Physics.
Journal
Journal of Applied Physics
Volume
83
Year of Publication
1998
ISSN
00218979