Point defect chemistry of metal oxide heterostructures

Publication Type

Journal Article

Authors

DOI

Abstract

This article reviews the defect chemistry of perovskite ferroelectric oxides such as barium titanate and lead zirconate titanate. Such metal oxides are being considered for a wide range of applications that include nonvolatile memories and dynamic random access memories. Time-dependent degradation of these devices is controlled at least in part by point defects, which are determined by the defect chemistry of the material. The role of point defects on Pb(Zr,Ti)O3 thin film device properties such as fatigue, switching, polarization relaxation and imprint is discussed.

Journal

Annual Review of Materials Science

Volume

28

Year of Publication

1998

ISSN

00846600

Notes

cited By 78

Research Areas