Publications

X Author: S Aggarwal

2000

Aggarwal, S, S.R Perusse, C.J Kerr, Ramamoorthy Ramesh, D.B Romero, J .T Jr, L Boyer, and G Velasquez."Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors."Applied Physics Letters 76 (2000) 918-920. DOI
Ganpule, C.S, V Nagarajan, H Li, A.S Ogale, D.E Steinhauer, S Aggarwal, E Williams, Ramamoorthy Ramesh, and P De Wolf."Role of 90° domains in lead zirconate titanate thin films."Applied Physics Letters 77 (2000) 292-294. DOI
Nagarajan, V, S.P Alpay, C.S Ganpule, B.K Nagaraj, S Aggarwal, E.D Williams, A.L Roytburd, and Ramamoorthy Ramesh."Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films."Applied Physics Letters 77 (2000) 438-440. DOI
Aggarwal, S, A.P Monga, S.R Perusse, Ramamoorthy Ramesh, V Ballarotto, E.D Williams, B.R Chalamala, Y Wei, and R.H Reuss."Spontaneous ordering of oxide nanostructures."Science 287 (2000) 2235-2237. DOI
Chalamala, B.R, Y Wei, R.H Reuss, S Aggarwal, S.R Perusse, B.E Gnade, and Ramamoorthy Ramesh."Stability and chemical composition of thermally grown iridium-oxide thin films."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18 (2000) 1919-1922.
Canedy, C.L, S Aggarwal, H Li, T Venkatesan, Ramamoorthy Ramesh, F.W Van Keuls, R.R Romanofsky, and F.A Miranda."Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O 12/ZrO2 heterostructures grown on silicon."Applied Physics Letters 77 (2000) 1523-1525. DOI
Friessnegg, T, S Aggarwal, Ramamoorthy Ramesh, B Nielsen, E.H Poindexter, and D.J Keeble."Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset."Applied Physics Letters 77 (2000) 127-129. DOI

1999

Nagaraj, B, T Sawhney, S Perusse, S Aggarwal, Ramamoorthy Ramesh, V.S Kaushik, S Zafar, R.E Jones, J.-H Lee, V Balu, and J Lee."(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications."Applied Physics Letters 74 (1999) 3194-3196. DOI
Van Keuls, F.W, R.R Romanofsky, N.D Varaljay, F.A Miranda, C.L Canedy, S Aggarwal, T Venkatesan, and Ramamoorthy Ramesh."A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications."Microwave and Optical Technology Letters 20 (1999) 53-56. DOI
Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters 75 (1999) 716-718. DOI
Aggarwal, S, A.M Dhote, H Li, S Ankem, and Ramamoorthy Ramesh."Conducting barriers for vertical integration of ferroelectric capacitors on Si."Applied Physics Letters 74 (1999) 230-232. DOI
Aggarwal, S, I.G Jenkins, B Nagaraj, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Conducting diffusion barriers for integration of ferroelectric capacitors on Si."Integrated Ferroelectrics 25 (1999) 205-221. DOI
Subramanyam, G, F.W Van Keuls, F.A Miranda, C.L Canedy, S Aggarwal, T Venkatesan, and Ramamoorthy Ramesh."Correlation of electric field and critical design parameters for ferroelectric tunable microwave filters."Integrated Ferroelectrics 24 (1999) 273-285. DOI
Friessnegg, T, B Nielsen, V.J Ghosh, A.R Moodenbaugh, S Madhukar, S Aggarwal, D.J Keeble, E.H Poindexter, P Mascher, and Ramamoorthy Ramesh."Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy."Materials Research Society Symposium - Proceedings 541 (1999) 161-165.
Chalamala, B.R, Y Wei, R.H Reuss, S Aggarwal, B.E Gnade, Ramamoorthy Ramesh, J.M Bernhard, E.D Sosa, and D.E Golden."Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films."Applied Physics Letters 74 (1999) 1394-1396. DOI
.T Jr, J, L.L Boyer, G Velasquez, Ramamoorthy Ramesh, S Aggarwal, and V Keramidas."Effect of hydrogen anneals on niobium-doped lead zirconate titanate capacitors with lanthanum strontium cobalt oxide/platinum electrodes."Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (1999) 5361-5363.
Nagarajan, V, C.S Ganpule, B Nagaraj, S Aggarwal, S.P Alpay, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films."Applied Physics Letters 75 (1999) 4183-4185. DOI
Alpay, S.P, V Nagarajan, L.A Bendersky, M.D Vaudin, S Aggarwal, Ramamoorthy Ramesh, and A.L Roytburd."Effect of the electrode layer on the polydomain structure of epitaxial PbZr0.2Ti0.8O3 thin films."Journal of Applied Physics 85 (1999) 3271-3277. DOI
Nagaraj, B, S Aggarwal, T.K Song, T Sawhney, and Ramamoorthy Ramesh."Leakage current mechanisms in lead-based thin-film ferroelectric capacitors."Physical Review B - Condensed Matter and Materials Physics 59 (1999) 16022-16027. DOI
Aggarwal, S, S.R Perusse, B Nagaraj, and Ramamoorthy Ramesh."Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors."Applied Physics Letters 74 (1999) 3023-3025. DOI
Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, S.B Samavedam, S Choopun, and R.P Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.
Van Keuls, F.W, C.H Mueller, F.A Miranda, R.R Romanofsky, C.L Canedy, S Aggarwal, T Venkatesan, Ramamoorthy Ramesh, J.S Horwitz, W L Chang, and W.J Kim."Room temperature thin film BaxSr1-xTiO3 Ku-band coupled microstrip phase shifters: effects of film thickness, doping, annealing and substrate choice."IEEE MTT-S International Microwave Symposium Digest 2 (1999) 737-740.
Ganpule, C.S, A Stanishevsky, S Aggarwal, J Melngailis, E Williams, Ramamoorthy Ramesh, V Joshi, and C. Paz De Araujo."Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films."Applied Physics Letters 75 (1999) 3874-3876. DOI
Ganpule, C.S, A Stanishevsky, Q Su, S Aggarwal, J Melngailis, E Williams, and Ramamoorthy Ramesh."Scaling of ferroelectric properties in thin films."Applied Physics Letters 75 (1999) 409-411. DOI
Auciello, O, A.R Krauss, I.M Jaemo, A Dhote, D.M Gruen, S Aggarwal, Ramamoorthy Ramesh, E.A Irene, Y Gao, and A.H Mueller."Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques."Integrated Ferroelectrics 27 (1999) 103-118. DOI