Correlation of electric field and critical design parameters for ferroelectric tunable microwave filters

Conference Paper

Subramanyam, G, F.W Van Keuls, F.A Miranda, C.L Canedy, S Aggarwal, T Venkatesan, Ramamoorthy Ramesh

10.1080/10584589908215597

The correlation of electric field and critical design parameters such as the insertion loss, frequency tunability, return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value between 15 and 5 MHz/cm/kV. The loss parameter varied for different bias configurations used for electrically tuning the filter. The loss parameter varied from 0.05 to 0.01 dB/cm/kV at room temperature.

Integrated Ferroelectrics

24

1999

10584587

cited By 17

Ramesh Lab