Publication Type:Journal Article
Source:Journal of Materials Research, Volume 14, Number 3, p.940-947 (1999)
Keywords:crystal structure, Dielectric films, Electric conductivity of solids, Ferroelectric materials, laser ablation, Lead compounds, Lead zirconate titanate, Molybdenum compounds, Molybdenum silicide, phase transitions, Pulsed laser ablation (PLA), Pulsed laser applications, Random access storage, Semiconducting silicon, surface roughness, Thermal effects
We report on the feasibility of using molybdenum suicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.
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