(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
Nagaraj, B., T. Sawhney, S. Perusse, S. Aggarwal, Ramamoorthy Ramesh, V.S. Kaushik, S. Zafar, R.E. Jones, J.-H. Lee, V. Balu, J. Lee
The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
Applied Physics Letters
Year of Publication