Publication Type:Journal Article
Source:Applied Physics Letters, American Institute of Physics Inc., Woodbury, Volume 74, Number 21, p.3194-3196 (1999)
Keywords:Barium titanate, Capacitance, Capacitors, current density, Dielectric films, Dynamic random access storage, electric potential, electrodes, Leakage currents, Permittivity, Perovskite, Poole-Frenkel mechanisms, Strontium compounds, strontium titanate, thin films
The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
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