(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

Publication Type:

Journal Article

Source:

Applied Physics Letters, American Institute of Physics Inc., Woodbury, Volume 74, Number 21, p.3194-3196 (1999)

Abstract:

The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

Notes:

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