(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

Journal Article

Nagaraj, B, T Sawhney, S Perusse, S Aggarwal, Ramamoorthy Ramesh, V.S Kaushik, S Zafar, R.E Jones, J.-H Lee, V Balu, J Lee

10.1063/1.124104

The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

Applied Physics Letters

74

1999

00036951

cited By 64

Ramesh Lab