(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

Publication Type

Journal Article

Authors

DOI

Abstract

The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

Journal

Applied Physics Letters

Volume

74

Year of Publication

1999

ISSN

00036951

Notes

cited By 64

Research Areas