Publication Type:Journal Article
Source:Applied Physics Letters, American Institute of Physics Inc., Volume 74, Number 10, p.1394-1396 (1999)
The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800°C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600°C accompanied by surface roughening. Annealing the Ir film at 900°C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
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