Publication Type:Journal Article
Source:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 18, Number 4, p.1919-1922 (2000)
The effect of growth conditions on the thermal stability and chemical composition of iridium-oxide thin films fabricated by annealing Ir films in O2 is presented. The oxide growth as a function of anneal temperature was studied by x-ray photoelectron spectroscopy depth profile analysis and the thermal stability was determined using temperature programmed desorption spectroscopy. We observed that with increasing anneal temperature, the surface oxidized to IrO2 (110) and the thermal stability of the resulting oxide increased. X-ray photoelectron spectroscopy depth profiles showed that IrO2 starts to form at 600°C simultaneous with an increase in the surface roughness of the film. © 2000 American Vacuum Society.
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