A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications

Publication Type:

Journal Article

Authors:

F.W. Van Keuls; R.R. Romanofsky; N.D. Varaljay; F.A. Miranda; C.L. Canedy; S. Aggarwal; T. Venkatesan; Ramamoorthy Ramesh

Source:

Microwave and Optical Technology Letters, John Wiley and Sons Inc., Volume 20, Number 1, p.53-56 (1999)

Keywords:

Barium strontium titanate, electric potential, Ferroelectric devices, Ku band, Microstrip lines, Phase shift, Phase shifters, Semiconductor device manufacture, thin films

Abstract:

We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔφS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. © 1999 John Wiley & Sons, Inc.

Notes:

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