Publications
2004
Li, , J., B. Nagaraj, H. Liang, W. Cao, C.H. Lee, and Ramamoorthy Ramesh."Ultrafast polarization switching in thin-film ferroelectrics."Applied Physics Letters
84 (2004) 1174-1176. DOI
2003
Li, , J., H. Liang, B. Nagaraj, W. Cao, C.H. Lee, and Ramamoorthy Ramesh."Application of an ultrafast photonic technique to study polarization switching dynamics of thin-film ferroelectric capacitors."Journal of Lightwave Technology
21 (2003) 3282-3291. DOI
2002
Nagaraj, B., T. Wu, S.B. Ogale, T. Venkatesan, and Ramamoorthy Ramesh."Interface characterization of all-perovskite oxide field effect heterostructures."Journal of Electroceramics
8 (2002) 233-241. DOI
Liu, B.T., K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, and O. Auciello."Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer."Applied Physics Letters
80 (2002) 3599-3601. DOI
Stanishevsky, A., B. Nagaraj, J. Melngailis, Ramamoorthy Ramesh, L. Khriachtchev, and E. McDaniel."Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors."Journal of Applied Physics
92 (2002) 3275-3278. DOI
Li, , J., H. Liang, W. Cao, C.H. Lee, B. Nagaraj, and Ramamoorthy Ramesh."Study of ultra-fast polarization switching in thin film ferroelectric capacitors."2002 International Topical Meeting on Microwave Photonics, MWP 2002 - Technical Digest
(2002) 197-200. DOI
2001
Wu, T., S.B. Ogale, J.E. Garrison, B. Nagaraj, A. Biswas, Z. Chen, R.L. Greene, Ramamoorthy Ramesh, T. Venkatesan, and A.J. Millis."Electroresistance and electronic phase separation in mixed-valent manganites."Physical Review Letters
86 (2001) 5998-6001. DOI
Nagaraj, B., S. Aggarwal, and Ramamoorthy Ramesh."Influence of contact electrodes on leakage characteristics in ferroelectric thin films."Journal of Applied Physics
90 (2001) 375-382. DOI
2000
Aggarwal, S., B. Nagaraj, I.G. Jenkins, H. Li, R.P. Sharma, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, A.R. Krauss, and O. Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia
48 (2000) 3387-3394. DOI
Wu, T., S.B. Ogale, J.E. Garrison, B. Nagaraj, Z. Chen, Ramamoorthy Ramesh, T. Venkatesan, Rzchowski M.S., Kawasaki M., Millis A.J., Molnar S., and Rajeswari M.."Deposition and electrical characterization of dielectric/ferromagnetic heterostructure."Materials Research Society Symposium - Proceedings
602 (2000) 363-370.
Nagarajan, V., S.P. Alpay, C.S. Ganpule, B. Nagaraj, S. Aggarwal, A.L. Roytburd, E.D. Williams, and Ramamoorthy Ramesh."Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness."Materials Research Society Symposium - Proceedings
596 (2000) 505-510.
Aggarwal, S., C. Ganpule, I.G. Jenkins, B. Nagaraj, A. Stanishevsky, J. Melngailis, E. Williams, and Ramamoorthy Ramesh."High density ferroelectric memories: Materials, processing and scaling."Integrated Ferroelectrics
28 (2000) 213-225. DOI
1999
Nagaraj, B., T. Sawhney, S. Perusse, S. Aggarwal, Ramamoorthy Ramesh, V.S. Kaushik, S. Zafar, R.E. Jones, J.-H. Lee, V. Balu, and J. Lee."(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications."Applied Physics Letters
74 (1999) 3194-3196. DOI
Aggarwal, S., S. Madhukar, B. Nagaraj, I.G. Jenkins, Ramamoorthy Ramesh, L. Boyer, and J.T. Jr.."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters
75 (1999) 716-718. DOI
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J.T. Jr.."Conducting diffusion barriers for integration of ferroelectric capacitors on Si."Integrated Ferroelectrics
25 (1999) 205-221. DOI
Nagarajan, V., C.S. Ganpule, B. Nagaraj, S. Aggarwal, S.P. Alpay, A.L. Roytburd, E.D. Williams, and Ramamoorthy Ramesh."Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films."Applied Physics Letters
75 (1999) 4183-4185. DOI
Nagaraj, B., S. Aggarwal, T.K. Song, T. Sawhney, and Ramamoorthy Ramesh."Leakage current mechanisms in lead-based thin-film ferroelectric capacitors."Physical Review B - Condensed Matter and Materials Physics
59 (1999) 16022-16027. DOI
Aggarwal, S., S.R. Perusse, B. Nagaraj, and Ramamoorthy Ramesh."Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors."Applied Physics Letters
74 (1999) 3023-3025. DOI
Aggarwal, S., I.G. Jenkins, B. Nagaraj, C.J. Kerr, C. Canedy, Ramamoorthy Ramesh, G. Velasquez, L. Boyer, and J.T. Jr.."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters
75 (1999) 1787-1789. DOI
1998
Song, T.K., S. Aggarwal, Y. Gallais, B. Nagaraj, Ramamoorthy Ramesh, and J.T. Jr.."Activation fields in ferroelectric thin film capacitors: Area dependence."Applied Physics Letters
73 (1998) 3366-3368. DOI