Publication Type:Conference Paper
Source:Materials Research Society Symposium - Proceedings, Volume 602, p.363-370 (2000)
Keywords:Colossal magnetoresistance, Dielectric heterostructures, Doping (additives), Epitaxial growth, Field effect semiconductor devices, Heterojunctions, lanthanum compounds, pulsed laser deposition, substrates
We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.
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