Deposition and electrical characterization of dielectric/ferromagnetic heterostructure
Publication Type
Conference Paper
Authors
Wu, T., S.B. Ogale, J.E. Garrison, B. Nagaraj, Z. Chen, Ramamoorthy Ramesh, T. Venkatesan, Rzchowski M.S., Kawasaki M., Millis A.J., Molnar S., Rajeswari M.
Abstract
We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.
Journal
Materials Research Society Symposium - Proceedings
Volume
602
Year of Publication
2000
ISSN
02729172