Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

Publication Type

Conference Paper

Authors

Wu, T, S.B Ogale, J.E Garrison, B Nagaraj, Z Chen, Ramamoorthy Ramesh, T Venkatesan

Editors

M.S, Rzchowski, Kawasaki M, Millis A.J, Molnar S, Rajeswari M

Abstract

We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

Journal

Proceedings of the Materials Research Society Symposium -

Volume

602

Year of Publication

2000

ISSN

02729172

Notes

cited By 0

Organization

No Organization

Research Areas

Ramesh Lab