Publication Type:Journal Article
Source:Journal of Applied Physics, Volume 92, Number 6, p.3275-3278 (2002)
Keywords:Capacitors, Chemical compositions, Damaged layers, Dielectric layer, Ferroelectric capacitors, Ferroelectric materials, Ferroelectric property, Focused ion beams, Gallium impurity, Ion damage, Ion dose, Lead zirconate titanate, Radiation damage, Sub-100 nm
We studied the effect of ion damage on the properties of 50 keV Ga + focused ion beam fabricated lead-zirconate-titanate capacitors as a function of the ion dose. We observed significant modification in the chemical composition of the damaged layer due to loss of lead and oxygen, and gallium impurity accumulation. The 5-10 nm thick damaged layer becomes dielectric after annealing and does not recover its ferroelectric properties. This dielectric layer substantially reduces the actual volume of the ferroelectric material in sub-100 nm structures, and can affect their performance. © 2002 American Institute of Physics.
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