Publication Type:Journal Article
Source:Integrated Ferroelectrics, Taylor and Francis Inc., Volume 28, Number 1-4, p.213-225 (2000)
Keywords:Capacitors, Data storage equipment, Diffusion barrier layers, electric properties, electrodes, Ferroelectric capacitor structures, Ferroelectric devices, Ferroelectric properties, High density ferroelectric memories, Lead compounds, Perovskite, Polysilanes, Polysilicon plug, Silicon wafers, thin films
A review is presented of approaches to integrate thin film Pb(Zr,Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
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