Publications

X Author: B Nagaraj

2004

Li, J, B Nagaraj, H Liang, W Cao, C.H Lee, and Ramamoorthy Ramesh."Ultrafast polarization switching in thin-film ferroelectrics."Applied Physics Letters 84 (2004) 1174-1176. DOI

2003

Li, J, H Liang, B Nagaraj, W Cao, C.H Lee, and Ramamoorthy Ramesh."Application of an ultrafast photonic technique to study polarization switching dynamics of thin-film ferroelectric capacitors."Journal of Lightwave Technology 21 (2003) 3282-3291. DOI

2002

Nagaraj, B, T Wu, S.B Ogale, T Venkatesan, and Ramamoorthy Ramesh."Interface characterization of all-perovskite oxide field effect heterostructures."Journal of Electroceramics 8 (2002) 233-241. DOI
Liu, B.T, K Maki, S Aggarwal, B Nagaraj, V Nagarajan, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, and O Auciello."Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer."Applied Physics Letters 80 (2002) 3599-3601. DOI
Stanishevsky, A, B Nagaraj, J Melngailis, Ramamoorthy Ramesh, L Khriachtchev, and E McDaniel."Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors."Journal of Applied Physics 92 (2002) 3275-3278. DOI
Li, J, H Liang, W Cao, C.H Lee, B Nagaraj, and Ramamoorthy Ramesh."Study of ultra-fast polarization switching in thin film ferroelectric capacitors."2002 International Topical Meeting on Microwave Photonics, MWP 2002 - Technical Digest (2002) 197-200. DOI

2001

Wu, T, S.B Ogale, J.E Garrison, B Nagaraj, A Biswas, Z Chen, R.L Greene, Ramamoorthy Ramesh, T Venkatesan, and A.J Millis."Electroresistance and electronic phase separation in mixed-valent manganites."Physical Review Letters 86 (2001) 5998-6001. DOI
Nagaraj, B, S Aggarwal, and Ramamoorthy Ramesh."Influence of contact electrodes on leakage characteristics in ferroelectric thin films."Journal of Applied Physics 90 (2001) 375-382. DOI

2000

Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia 48 (2000) 3387-3394. DOI
Wu, T, S.B Ogale, J.E Garrison, B Nagaraj, Z Chen, Ramamoorthy Ramesh, T Venkatesan, Rzchowski M.S, Kawasaki M, Millis A.J, Molnar S, and Rajeswari M."Deposition and electrical characterization of dielectric/ferromagnetic heterostructure."Materials Research Society Symposium - Proceedings 602 (2000) 363-370.
Nagarajan, V, S.P Alpay, C.S Ganpule, B Nagaraj, S Aggarwal, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness."Materials Research Society Symposium - Proceedings 596 (2000) 505-510.
Aggarwal, S, C Ganpule, I.G Jenkins, B Nagaraj, A Stanishevsky, J Melngailis, E Williams, and Ramamoorthy Ramesh."High density ferroelectric memories: Materials, processing and scaling."Integrated Ferroelectrics 28 (2000) 213-225. DOI

1999

Nagaraj, B, T Sawhney, S Perusse, S Aggarwal, Ramamoorthy Ramesh, V.S Kaushik, S Zafar, R.E Jones, J.-H Lee, V Balu, and J Lee."(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications."Applied Physics Letters 74 (1999) 3194-3196. DOI
Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters 75 (1999) 716-718. DOI
Aggarwal, S, I.G Jenkins, B Nagaraj, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Conducting diffusion barriers for integration of ferroelectric capacitors on Si."Integrated Ferroelectrics 25 (1999) 205-221. DOI
Nagarajan, V, C.S Ganpule, B Nagaraj, S Aggarwal, S.P Alpay, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films."Applied Physics Letters 75 (1999) 4183-4185. DOI
Nagaraj, B, S Aggarwal, T.K Song, T Sawhney, and Ramamoorthy Ramesh."Leakage current mechanisms in lead-based thin-film ferroelectric capacitors."Physical Review B - Condensed Matter and Materials Physics 59 (1999) 16022-16027. DOI
Aggarwal, S, S.R Perusse, B Nagaraj, and Ramamoorthy Ramesh."Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors."Applied Physics Letters 74 (1999) 3023-3025. DOI
Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters 75 (1999) 1787-1789. DOI

1998

Song, T.K, S Aggarwal, Y Gallais, B Nagaraj, Ramamoorthy Ramesh, and J .T Jr."Activation fields in ferroelectric thin film capacitors: Area dependence."Applied Physics Letters 73 (1998) 3366-3368. DOI