Publications

X Author: A.M Dhote

2002

Auciello, O, A.M Dhote, Ramamoorthy Ramesh, B.T Liu, S Aggarwal, A.H Mueller, N.A Suvarova, and E.A Irene."Development of materials integration strategies for electroceramic film-based devices via complementary in situ and ex situ studies of film growth and interface processes."Integrated Ferroelectrics 46 (2002) 295-306. DOI
Liu, B.T, K Maki, S Aggarwal, B Nagaraj, V Nagarajan, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, and O Auciello."Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer."Applied Physics Letters 80 (2002) 3599-3601. DOI

2001

Krauss, A.R, O Auciello, A.M Dhote, J Im, S Aggarwal, Ramamoorthy Ramesh, E.A Irene, Y Gao, and A.H Mueller."Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties."Integrated Ferroelectrics 32 (2001) 121-131.
Dhote, A.M, O Auciello, D.M Gruen, and Ramamoorthy Ramesh."Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques."Applied Physics Letters 79 (2001) 800-802. DOI

2000

Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello."Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories."Acta Materialia 48 (2000) 3387-3394. DOI

1999

Aggarwal, S, A.M Dhote, H Li, S Ankem, and Ramamoorthy Ramesh."Conducting barriers for vertical integration of ferroelectric capacitors on Si."Applied Physics Letters 74 (1999) 230-232. DOI
Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, S.B Samavedam, S Choopun, and R.P Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.
Dhote, A.M, A.R Krauss, O Auciello, J Im, D.M Gruen, Ramamoorthy Ramesh, S.P Pai, and T Venkatesan."Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions."Materials Research Society Symposium - Proceedings 541 (1999) 281-286.

1998

Aggarwal, S, A.S Prakash, T.K Song, S Sadashivan, A.M Dhote, B Yang, Ramamoorthy Ramesh, Y Kisler, and S.E Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics 19 (1998) 159-177. DOI
Im, J, A.R Krauss, A.M Dhote, D.M Gruen, O Auciello, Ramamoorthy Ramesh, and R.P.H Chang."Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions."Applied Physics Letters 72 (1998) 2529-2531. DOI

1997

Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, A Krishnan, D Keeble, and E Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics 81 (1997) 3543-3547. DOI
Yang, B, S Aggarwal, A.M Dhote, T.K Song, Ramamoorthy Ramesh, and J.S Lee."La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier."Applied Physics Letters 71 (1997) 356-358. DOI
Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI

1996

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI
Aggarwal, S, A.M Dhote, Ramamoorthy Ramesh, W.L Warren, G.E Pike, D Dimos, M.V Raymond, B.A Tuttle, and J .T Jr."Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes."Applied Physics Letters 69 (1996) 2540-2542. DOI
Wei, W, A.M Dhote, Ramamoorthy Ramesh, and S Sauvage."Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon."Integrated Ferroelectrics 12 (1996) 53-62. DOI

1995

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI