Publication Type:Journal Article
Source:Applied Physics Letters, Volume 79, Number 6, p.800-802 (2001)
Conducting diffusion barrier layers play a critical role in high-density memory integration. We recently demonstrated that Ti-Al can be used as a diffusion barrier layer for the integration of ferroelectric capacitors with complementary metal-oxide semiconductor devices for the fabrication of nonvolatile ferroelectric random access memories (NVFRAMs). Here, we discuss results from systematic studies designed to understand Ti-Al film growth and oxidation processes using in situ ion beam sputter deposition in conjunction with complementary in situ atomic layer-resolution mass spectroscopy of recoil ion (MSRI) and surface sensitive x-ray photoelectron spectroscopy (XPS). The concurrent MSRI/XPS analysis revealed that amorphous Ti-Al layers produced by tailored sputter-deposition methods are resistant to oxidation to at least 600 °C, and that oxidation occurs only when the a-Ti-Al layers are exposed to oxygen at >600 °C, via the segregation of Ti species to the surface and TiO2 formation. The a-Ti-Al layers discussed in this letter could be used in the double functionality of a bottom electrode/diffusion barrier for the integration of ferroelectric capacitors with Si substrates for the fabrication of NVFRAMs and other devices. © 2001 American Institute of Physics.
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