Export 7 results:
Author Title [ Type(Desc)] Year
Filters: Author is B. Yang  [Clear All Filters]
Conference Paper
Li, H., B. Yang, A. Dhote, S. Aggarwal, L. Salamanca-Riba, and Ramamoorthy Ramesh. "Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors." Materials Research Society Symposium - Proceedings. Vol. 493. MRS, Warrendale, PA, United States, 1998. 171-176.
Journal Article
Song, T.K., S. Aggarwal, A.S. Prakash, B. Yang, and Ramamoorthy Ramesh. "Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors." Applied Physics Letters 71 (1997) 2211-2213.
Yang, B., S. Aggarwal, A.M. Dhote, T.K. Song, Ramamoorthy Ramesh, and J.S. Lee. "La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier." Applied Physics Letters 71 (1997) 356-358.
Aggarwal, S., A.S. Prakash, T.K. Song, S. Sadashivan, A.M. Dhote, B. Yang, Ramamoorthy Ramesh, Y. Kisler, and S.E. Bernacki. "Lead based ferroelectric capacitors for low voltage non-volatile memory applications." Integrated Ferroelectrics 19 (1998) 159-177.
Yang, B., T.K. Song, S. Aggarwal, and Ramamoorthy Ramesh. "Low voltage performance of Pb(Zr, Ti)O3 capacitors through donor doping." Applied Physics Letters 71 (1997) 3578-3580.
Gruverman, A., H. Tokumoto, A.S. Prakash, S. Aggarwal, B. Yang, M. Wuttig, Ramamoorthy Ramesh, O. Auciello, and T. Venkatesan. "Nanoscale imaging of domain dynamics and retention in ferroelectric thin films." Applied Physics Letters 71 (1997) 3492-3494.
Song, T.K., J. Ahn, B. Yang, S. Aggarwal, and Ramamoorthy Ramesh. "Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories." Journal of the Korean Physical Society 32 (1998) S1721-S1723.