Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
Publication Type
Journal Article
Authors
Ko, C, Y Lee, Y H Chen, J Suh, D Fu, A Suslu, S Lee, J.D Clarkson, H.S Choe, S Tongay, Ramamoorthy Ramesh, J Wu
DOI
Abstract
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Journal
Advanced Materials
Volume
28
Year of Publication
2016
ISSN
09359648
Notes
cited By 51