Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Publication Type

Journal Article

Authors

DOI

Abstract

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Journal

Advanced Materials

Volume

28

Year of Publication

2016

ISSN

09359648

Notes

cited By 51

Research Areas