Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
Publication Type
Journal Article
Authors
Ko, C., Y. Lee, Y. H. Chen, J. Suh, D. Fu, A. Suslu, S. Lee, J.D. Clarkson, H.S. Choe, S. Tongay, Ramamoorthy Ramesh, J. Wu
DOI
Abstract
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Journal
Advanced Materials
Volume
28
Year of Publication
2016
ISSN
09359648