Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Publication Type:

Journal Article

Source:

Advanced Materials, Volume 28, p.2923-2930 (2016)

Date Published:

02/2016

Abstract:

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.