Optimization of Electronic Domain-Wall Properties by Aliovalent Cation Substitution

Publication Type:

Journal Article

Source:

Advanced Electronic Materials, Volume 2, p.1500195 (2016)

Date Published:

01/2016

Abstract:

Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force micro­scopy. Emergent doping-related variations are quantified by local transport measurements and explained based on phenomenological theories.