Publication Type:Journal Article
Source:Advanced Electronic Materials, Volume 2, p.1500195 (2016)
Electronic domain-wall conductance is controlled by chemical aliovalent doping in the p-type semiconductor Er1-xCaxMnO3. Coexisting bound (top panel) and mobile (lower panel) charges at the walls are analyzed using electrostatic force microscopy. Emergent doping-related variations are quantified by local transport measurements and explained based on phenomenological theories.