Publications

X Author: S Madhukar

1999

Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters 75 (1999) 716-718. DOI
Friessnegg, T, B Nielsen, V.J Ghosh, A.R Moodenbaugh, S Madhukar, S Aggarwal, D.J Keeble, E.H Poindexter, P Mascher, and Ramamoorthy Ramesh."Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy."Proceedings of the Materials Research Society Symposium - 541 (1999) 161-165.
Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, S.B Samavedam, S Choopun, and R.P Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.

1998

Jenkins, I.G, T.K Song, S Madhukar, A.S Prakash, S Aggarwal, and Ramamoorthy Ramesh."Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors."Applied Physics Letters 72 (1998) 3300-3302. DOI
Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics 2 (1998) 171-179. DOI
Keeble, D.J, B Nielsen, A Krishnan, K.G Lynn, S Madhukar, Ramamoorthy Ramesh, and C.F Young."Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation."Applied Physics Letters 73 (1998) 318-320. DOI
Keeble, D.J, A Krishnan, T Friessnegg, B Nielsen, S Madhukar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter."Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation."Applied Physics Letters 73 (1998) 508-510. DOI

1997

Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, A Krishnan, D Keeble, and E Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics 81 (1997) 3543-3547. DOI
Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI
Keeble, D.J, S Madhukar, B Nielsen, A Krishnan, P Asoka-Kumar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter."Vacancy related defects in La0.5Sr0.5CoO3-δ thin films."Proceedings of the Materials Research Society Symposium - 477 (1997) 229-233.

1996

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI

1995

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI