Publications
X Author: C.M Cotell
1997
Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research
12 (1997) 1589-1594. DOI
1996
Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters
68 (1996) 1350-1352. DOI
1995
Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters
(1995) 1350. DOI