Tuning the electronic effective mass in double-doped SrTiO3
Publication Type
Journal Article
Authors
Ravichandran, J, W Siemons, M.L Scullin, S Mukerjee, M Huijben, J.E Moore, A Majumdar, Ramamoorthy Ramesh
DOI
Abstract
We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO 3-δ, we can tune the effective mass ranging from 6 to 20m e as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum- and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-δ. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors. © 2011 The American Physical Society.
Journal
Physical Review B - Condensed Matter and Materials Physics
Volume
83
Year of Publication
2011
ISSN
10980121
Notes
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