Publication Type:Journal Article
Source:Applied Physics Letters, American Institute of Physics Inc., Volume 84, Number 10, p.1742-1744 (2004)
Keywords:Barium titanate, Coalescence, Dislocations (crystals), Epitaxial growth, ion beams, Ion-beam milling, lanthanum compounds, Metallic films, microstructure, Perovskite, pulsed laser deposition, Semiconductor films, Shear stress, Single crystals, thin films, Threading dislocations, transmission electron microscopy, X ray diffraction
The epitaxial growth of (Ba,Sr)TiO3 (BST) films on (001) LaAlO3 by pulsed laser deposition and dislocation structures of the films were investigated. The BST films were deposited by PLD from a sintered BST target using growth conditions that results in high quality epitaxial films. The result show that the treading dislocations are not generated as the result of half-loop climb from the deposit surface. It was found that the dislocation were formed when misfit dislocations are forced away from the interface during island coalescence.
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