Threading dislocation generation in epitaxial (Ba,Sr)TiO3 films grown on (001) LaAlO3 by pulsed laser deposition

Publication Type:

Journal Article

Authors:

I.B. Misirlioglu; A.L. Vasiliev; M. Aindow; S.P. Alpay; Ramamoorthy Ramesh

Source:

Applied Physics Letters, American Institute of Physics Inc., Volume 84, Number 10, p.1742-1744 (2004)

Keywords:

Barium titanate, Coalescence, Dislocations (crystals), Epitaxial growth, ion beams, Ion-beam milling, lanthanum compounds, Metallic films, microstructure, Perovskite, pulsed laser deposition, Semiconductor films, Shear stress, Single crystals, thin films, Threading dislocations, transmission electron microscopy, X ray diffraction

Abstract:

The epitaxial growth of (Ba,Sr)TiO3 (BST) films on (001) LaAlO3 by pulsed laser deposition and dislocation structures of the films were investigated. The BST films were deposited by PLD from a sintered BST target using growth conditions that results in high quality epitaxial films. The result show that the treading dislocations are not generated as the result of half-loop climb from the deposit surface. It was found that the dislocation were formed when misfit dislocations are forced away from the interface during island coalescence.

Notes:

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