Publication Type:Journal Article
Source:Applied Physics Letters, Volume 85, Number 14, p.2905-2907 (2004)
Keywords:Antiphase domain boundaries (ADB), atomic force microscopy, Electric fields, film growth, Flat substrates, Interfaces (materials), Leakage currents, Magnesia, molecular beam epitaxy, Permittivity, pulsed laser deposition, thin films, Vicinal substrates, X ray diffraction analysis
The epitaxial growth of Ba 0.5Sr 0.5TiO 3 (BST) thin films on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy was described. The  oriented MgO substrates with 2° and 5° miscut toward  were considered. It was shown that the nucleation of antiphase domain boundaries in the direction parallel to the step edges was greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. It was observed that the reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes were parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.
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