Studies of ferroelectric heterostructure thin films and interfaces, via in situ analytical techniques

Journal Article

Auciello, O., A.R. Krauss, J. Im, A. Dhote, D.M. Gruen, E.A. Irene, Y. Gao, A.H. Mueller, Ramamoorthy Ramesh

10.1080/10584580008222216

The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as "smart cards", while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructures and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi2Ta2O9 (SET) and BaxSr1-xTiO3 (BST) film growth and interface processes are discussed. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Integrated Ferroelectrics

28

2000

10584587

cited By 0

Ramesh Lab