Structure and properties of ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures
Ramesh, Ramamoorthy, W.K. Chan, B. Wilkens, A. Inam, F. Tillerot, T.D. Sands, J.M. Tarascon, V.G. Keramidas
Epitaxial thin film PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures have been grown on single crystal LaA103 by in-situ pulsed laser deposition. Structural characterization by x-ray diffraction, and transmission electron microscopy reveals that the films are typically c-axis oriented with a small fraction of a-axis oriented material, that is deposition condition dependent. The electrical properties change systematically with the crystalline quality and the best properties are obtained at higher temperatures. Above 715‡ C, there is progressive loss of lead and the electrical properties are diminished. © 1992 TMS.
Journal of Electronic Materials
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