Publication Type:Conference Paper
Source:IEEE International Symposium on Applications of Ferroelectrics, Volume 3 (2008)
Keywords:Coercive fields, Coercive force, Epitaxial films, Ferroelectric films, Ferroelectric materials, Ferroelectric properties, films, Magnetic properties, Magnetoelectric devices, Polarization, Promising materials, Remanent polarizations, Semiconducting bismuth compounds, Spontaneous polarizations, Strain dependences, Switching behaviors, thin films, Tun abilities, Volatile memories
We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)pBiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.
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