Size effects in ultrathin epitaxial ferroelectric heterostructures

Publication Type:

Journal Article

Authors:

V. Nagarajan; S. Prasertchoung; T. Zhao; H. Zheng; J. Ouyang; Ramamoorthy Ramesh; W. Tian; X.Q. Pan; D.M. Kim; C.B. Eom; H. Kohlstedt; R. Waser

Source:

Applied Physics Letters, Volume 84, Number 25, p.5225-5227 (2004)

Keywords:

Capacitors, Cathode ray oscilloscopes, Compressive strain, electrodes, Electrostatics, Epitaxial growth, Ferroelectric materials, Heterojunctions, lattice constants, Lattice mismatch, Perovskite, Photoresists, pulsed laser deposition, Pulsed polarization, Superconducting transition temperature, Switched polarization, Thick films, transmission electron microscopy, Ultrathin films

Abstract:

The thickness scaling effect in PbZr 0.2Ti 0.8O 3 heterostructures was investigated. A systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick was also shown. The experiment was focused on the PZT composition since it had an in-plane lattice parameter. A preliminary model based on a modified Landau Ginzburg approach suggested that the nature of the electrostatics at the ferroelectric-electrode interface played a significant role in the scaling of ferroelectric thin films.

Notes:

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