Publication Type:Journal Article
Source:Acta Materialia, Volume 58, Number 2, p.457-463 (2010)
Keywords:Back-gate, Crystal substrates, electric conductivity, electrical resistivity, film growth, Functional oxides, Generic method, In-situ characterization, laser deposition, lasers, Mass spectrometers, Perovskite, Programmable logic controllers, pulsed laser deposition, Secondary emission, Secondary ion mass spectrometry, Secondary ion mass spectroscopy, Single crystals, SrTiO, Strontium, Strontium alloys, Strontium compounds, strontium titanate, Substrate resistance, substrates, Thermodynamic conditions, Thin film devices, Thin film material
We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10-7 torr, 10-60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices. © 2009 Acta Materialia Inc.
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