Publication Type:Journal Article
Source:Applied Physics Letters, Volume 84, Number 16, p.3130-3132 (2004)
Keywords:atomic force microscopy, Capacitors, Data reduction, electric conductivity, electric potential, Extrapolation, Ferroelectric capacitors, Ferroelectric devices, Ferroelectric thin films, hysteresis, Noise levels, Polarization, Polarization hysteresis, Polycrystalline materials, Reactive ion etching, Resistors, sputtering, Switchable pulse polarization
The measurement of switchable pulse polarization of micron and submicron ferroelectric capacitors was discussed, using pulse switching and atomic force microscope (AFM). The measurement setup for pulsed probing to measure the switchable polarization of a submicron capacitor was a combination of a pulse generator, an AFM, a shunt resistor, and a digital sampling oscilloscope. The switchable polarization of discrete polycrystalline Pb(ZrTi)O 3 capacitors were obtained using fast square pulses with rise time on the order of tens of nanaoseconds. The results show that switchable polarization is independent of the pulse width within experimental error.
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