Publication Type:Journal Article
Source:Applied Physics Letters, Volume 95, Number 6 (2009)
Keywords:Band offsets, electric potential, External quantum efficiency, Ferroelectric polarization, ferroelectricity, indium, Maximum Efficiency, Open-circuit voltages, Order of magnitude, Oxide heterostructures, Photovoltaic effects, Semiconducting bismuth compounds, Semiconducting indium compounds, tin, Tin doped indium oxide
We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.
cited By 404