Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors

Publication Type:

Conference Paper


Materials Research Society Symposium - Proceedings, Materials Research Society, Warrendale, PA, United States, Volume 596, p.393-397 (2000)


Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.


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