Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors
Publication Type
Conference Paper
Authors
Friessnegg, T., B. Nielsen, V.J. Ghosh, S. Aggarwal, D.J. Keeble, E.H. Poindexter, Ramamoorthy Ramesh
Abstract
Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.
Journal
Materials Research Society Symposium - Proceedings
Volume
596
Year of Publication
2000
ISSN
02729172