Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors

Publication Type

Conference Paper

Authors

Friessnegg, T, B Nielsen, V.J Ghosh, S Aggarwal, D.J Keeble, E.H Poindexter, Ramamoorthy Ramesh

Abstract

Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.

Journal

Proceedings of the Materials Research Society Symposium -

Volume

596

Year of Publication

2000

ISSN

02729172

Notes

cited By 2

Organization

No Organization

Research Areas

Ramesh Lab