Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors

Publication Type:

Conference Paper

Authors:

T. Friessnegg; B. Nielsen; V.J. Ghosh; S. Aggarwal; D.J. Keeble; E.H. Poindexter; Ramamoorthy Ramesh

Source:

Materials Research Society Symposium - Proceedings, Materials Research Society, Warrendale, PA, United States, Volume 596, p.393-397 (2000)

Keywords:

annealing, Capacitors, Crystal defects, deposition, etching, Ferroelectric devices, hysteresis, Hysteresis loops, lanthanum compounds, Lead compounds, oxygen, Oxygen deficient atmosphere, Partial pressure, Positron depth profiling, Positrons, Post growth annealing, Pulsed laser applications, pulsed laser deposition

Abstract:

Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.

Notes:

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