Publication Type:Conference Paper
Source:Materials Research Society Symposium Proceedings, Volume 685, p.353-358 (2001)
Keywords:Desorption peak, Field emitter arrays, glass, Molybdenum, oxidation, Partial oxidation, Thermal desorption spectroscopy, thin films, Ultraviolet photoelectron spectroscopy, X ray diffraction, X ray photoelectron spectroscopy
Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.
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