Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays

Conference Paper

Chalamala, B.R., R.H. Reuss, Y. Wei, J.M. Bernhard, E.D. Sosa, D.E. Golden, S. Aggarwal, Ramamoorthy Ramesh

Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.

Materials Research Society Symposium Proceedings

685

2001

02729172

Ramesh Lab