Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays
Publication Type
Conference Paper
Authors
Chalamala, B.R, R.H Reuss, Y Wei, J.M Bernhard, E.D Sosa, D.E Golden, S Aggarwal, Ramamoorthy Ramesh
Abstract
Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.
Journal
Proceedings of the Materials Research Society Symposium
Volume
685
Year of Publication
2001
ISSN
02729172
Notes
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