Publication Type:Journal Article
Source:Applied Physics Letters, Volume 92, Number 14 (2008)
Keywords:bismuth compounds, Energy gap, Four-circle x-ray diffraction, molecular beam epitaxy, Multiple-angle spectroscopic ellipsometry, Optical band gap, Oxygen activity, spectroscopic ellipsometry, substrates, thin films
BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.
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