Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions

Journal Article

Shinde, S.R, S.B Ogale, J Higgins, R.J Choudhary, V.N Kulkarni, T Venkatesan, H Zheng, Ramamoorthy Ramesh, A.V Pogrebnyakov, S.Y Xu, Q Li, X.X Xi, J.M Redwing, D Kanjilal

10.1063/1.1687982

The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.

Applied Physics Letters

84

2004

00036951

cited By 32

No Organization

Ramesh Lab