Publication Type:Journal Article
Source:Applied Physics Letters, Volume 84, Number 13, p.2352-2354 (2004)
Keywords:atomic force microscopy, Chemical vapor deposition, Columnar defects, Computer simulation, Computer software, Critical current density (superconductivity), Crystal defects, Current voltage characteristics, Deformation, Electric resistance, Electronic energy loss, Energy dissipation, ion beams, Ion bombardment, Magnesium compounds, morphology, Particle accelerators, pinning, thin films
The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.
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