Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions

Journal Article

Shinde, S.R., S.B. Ogale, J. Higgins, R.J. Choudhary, V.N. Kulkarni, T. Venkatesan, H. Zheng, Ramamoorthy Ramesh, A.V. Pogrebnyakov, S.Y. Xu, Q. Li, X.X. Xi, J.M. Redwing, D. Kanjilal

10.1063/1.1687982

The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.

Applied Physics Letters

84

2004

00036951

Ramesh Lab