Publication Type:Journal Article
Source:Applied Physics Letters, Volume 64, Number 25, p.3407-3409 (1994)
Keywords:bismuth compounds, Bismuth titanate, Crystal defects, deposition, Epitaxial growth, Heterojunctions, lanthanum compounds, Lanthanum modified lead zirconate titanate, Lanthanum strontium cobalt oxide, Lead compounds, microstructure, Pole figure analysis, pulsed laser deposition, Semiconducting silicon, Thin film heterostructures, thin films, transmission electron microscopy, X ray analysis, X ray diffraction, yttria stabilized zirconia, zirconia
The microstructure of epitaxial La0.5Sr0.5CoO 3(LSCO)/ferroelectric lanthanum modified lead zirconate titanate (PLZT)/ La0.5Sr0.5CoO3(LSCO)/bismuth titanate(BT)/yttria-stabilized zirconia (YSZ) heterostructures on  silicon has been investigated. X-ray diffraction and pole figure analysis reveal epitaxial growth of the PLZT, LSCO, BT, and YSZ layers. High resolution transmission electron microscopy was done to study the crystal defects and interfacial structure.
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