Publication Type:Journal Article
Source:Annual Review of Materials Science, Annual Reviews Inc., Volume 25, Number 1, p.647-678 (1995)
This review provides an introduction to the idea of metal-oxide heterostructures. The potential application of metal-oxide heterostructures is demonstrated with the case study of ferroelectric nonvolatile memories, in which the ferroelectric stack contains a multicomponent metal oxide. The advantages of using metallic oxides as contact electrodes compared with conventional metal electrodes are demonstrated through results of reliability tests. Some novel ideas for the integration of multicomponent metallic oxides with conventional semiconductor electronics are also presented. Finally, a short discussion of the evolution of the general field of metal-oxide heterostructures is provided.
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