Publication Type:Conference Paper
Source:Materials Research Society Symposium - Proceedings, Materials Research Society, Pittsburgh, PA, United States, Volume 361, p.51-65 (1995)
Keywords:annealing, Barium titanate, Charge carriers, Charge injection, Crystals, Electrical suppression effect, Electronic trapping effect, Energy gap, Ferroelectric materials, heating, Ionic trapping effect, Lead compounds, Lead zirconate titanate (PZT), Paramagnetic resonance, Polarization, Radiation effects, Switchable polarization, voltage measurement
Switchable polarization can be significantly suppressed in ferroelectric (FE) materials by optical, thermal, and electrical processes. The thermal process can occur by either annealing the FE in a reducing environment or by heating it in air to 100 °C while impressing a bias near the switching threshold. The optical process occurs while biasing the FE near the switching threshold and illuminating with bandgap light. And the electrical suppression effect occurs by subjecting the FE to repeated polarization reversals. Using electron paramagnetic resonance, polarization-voltage measurements, and charge injection scenarios, we have been able to elucidate both electronic and ionic trapping effects that lead to a suppression in the amount of switchable polarization in FE materials. The relative roles of electronic and ionic effects in the same material can depend on the stress condition. For instance, in oxidized BaTiO3 crystals, optical and thermal suppressions occur by electronic domain pinning; electrical fatigue in the BaTiO3 crystals also appears to involve electronic charge trapping, however, it is suggested that these electronic traps are further stabilized by nearby ionic defects. In sol-gel PZT thin films with either Pt, RuO2, or La-Sr-Co-O electrodes it appears that the polarization suppression induced by electrical fatigue, a temperature/bias combination, or a light/bias combination are all primarily due to the trapping of electronic charge carriers to first order.
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