Materials science and integration bases for fabrication of (Ba xSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

Journal Article

Fan, W, B Kabius, J.M Miller, S Saha, J.A Carlisle, O Auciello, R.P.H Chang, Ramamoorthy Ramesh

10.1063/1.1616984

An investigation on the synthesis and material properties of layered TiAl/Cu/Ta electrodes was performed to achieve the integration of Cu electrodes. The TiAl layer provided an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation while the Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate. Using the surface analytical methods, characterization of the Cu-based layered structure showed that two amorphous oxide layers were formed on both sides of the TiAl barrier.

Journal of Applied Physics

94

2003

00218979

cited By 32

Ramesh Lab