Publication Type:Journal Article
Source:Applied Physics Letters, Volume 82, Number 9, p.1452-1454 (2003)
Keywords:annealing, Dielectric losses, diffusion, electrodes, film growth, Magnetron sputtering, Multilayered electrodes, multilayers, oxidation, Permittivity, sputter deposition
The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
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