Publication Type:Journal Article
Source:Applied Physics Letters, Volume 86, Number 15, p.1-3 (2005)
Keywords:Epitaxial growth, Extrinsic effects, Ferroelectric thin films, In-plane strains, lead, Microelectromechanical devices, Piezoelectric coefficients, piezoelectricity, Polarization, polycrystals, thin films
As a function of film orientation, the intrinsic effective piezoelectric coefficient e31,f is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb (Zrx Ti1-x) O3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e31,f are close to  orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e31,f is about -30 Cm2 on the rhombohedral side of the morphotropic phase boundary. © 2005 American Institute of Physics.
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