Imprint in ferroelectric capacitors

Publication Type:

Journal Article

Authors:

W.L. Warren; B.A. Tuttle; D. Dimos; G.E. Pike; H.N. Al-Shareef; Ramamoorthy Ramesh; J.T. Jr.

Source:

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume 35, Number 2 SUPPL. B, p.1521-1524 (1996)

Keywords:

Capacitors, Composition effects, Compositional dependent oxygen vacancy density, defects, Doping (additives), Ferroelectric capacitors, Ferroelectric devices, Ferroelectric materials, Ferroelectric memory devices, Imprint, Lead compounds, Oxygen vacancy related defect dipole, Polarization, Polarization voltage characteristics, Stress induced voltage shift, Thermal induced voltage shift, thin films, Voltage offset

Abstract:

We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.

Notes:

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