Imprint in ferroelectric capacitors

Publication Type:

Journal Article


Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume 35, Number 2 SUPPL. B, p.1521-1524 (1996)


We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.


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