High Speed Epitaxial Perovskite Memory on Flexible Substrates

Publication Type:

Journal Article

Source:

Advanced Materials, Wiley-VCH Verlag, Volume 29, Number 11 (2017)

Abstract:

Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.

Notes:

cited By 34