Growth of colossal magnetoresistance thin films on silicon
Publication Type
Journal Article
Authors
Trajanovic, Z, C Kwon, M.C Robson, K.-C Kim, M Rajeswari, Ramamoorthy Ramesh, T Venkatesan, S.E Lofland, S.M Bhagat, D Fork
DOI
Abstract
We are able to grow high quality La0.67Sr0.33MnO3(LSMO) colossal magnetoresistive (CMR) thin films on Y-stabilized zirconia (YSZ) buffered (100) Si substrates using a Bi4Ti3O12 texturing and lattice matching layer. The CMR films have very high structural perfection and show excellent transport and ferromagnetic properties, including the almost full saturation magnetization values and narrow ferromagnetic resonance peaks (15 Oe at 290 K). The lattice matching template/buffer layer approach is suitable for the high quality CMR films on Si. A close correlation between the magnetic hysteresis loop and the field dependence of MR is observed at lower temperatures. © 1996 American Institute of Physics.
Journal
Applied Physics Letters
Volume
69
Year of Publication
1996
ISSN
00036951
Notes
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