Publication Type:Journal Article
Source:Applied Physics Letters, American Institute of Physics Inc., Volume 70, Number 13, p.1763-1765 (1997)
c-axis textured La0.7Sr0.3MnO3-δ(LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, Tc, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than Tc, The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. © 1997 American Institute of Physics.
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