Publication Type:Journal Article
Source:Integrated Ferroelectrics, Taylor and Francis Inc., Volume 12, Number 1, p.63-69 (1996)
Keywords:Capacitor storage, Capacitors, Ferroelectric capacitors, Ferroelectric devices, Ferroelectric materials, film growth, Pulsed laser applications, pulsed laser deposition, Semiconducting gallium arsenide, X ray diffraction analysis
Thin film La0.5Sr0.5CoO3Pb0.9La 0.1Zr0.2Ti0.3O3/La 0.5Sr0.5CoO3 capacitor structures (LSCO/PLZT/LSCO) have been grown on (001) GaAs substrates with MgO as a buffer layer. The MgO films on GaAs were grown by pulsed laser deposition and electron-beam evaporation and the capacitor heterostructures were grown using pulsed laser deposition. X-ray diffraction (XRD) showed all films to be (001) oriented. Ferroelectric capacitors were fabricated to determine their electrical behavior: the films showed resistivity above 1010 ohms/cm2, a typical saturation polarization of 20-30 μC/cm2, minimum retention loss, low time-dependent imprint and negligible fatigue up to 1011 cycles. These characteristics indicate that high-quality (001) oriented PLZT can be easily integrated with GaAs substrates, and could be used to produce GaAs-based electrical and, more importantly, optical devices.
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