Giant piezoelectricity on Si for hyperactive MEMS

Journal Article

Baek, S.H, J Park, D.M Kim, V.A Aksyuk, R.R Das, S.D Bu, D.A Felker, J Lettieri, V Vaithyanathan, S.S.N Bharadwaja, N Bassiri-Gharb, Y.B Chen, H.P Sun, C.M Folkman, H.W Jang, D.J Kreft, S.K Streiffer, Ramamoorthy Ramesh, X.Q Pan, S Trolier-McKinstry, D.G Schlom, M.S Rzchowski, R.H Blick, C.B Eom

10.1126/science.1207186

{Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg 1/3Nb2/3)O3-PbTiO3 (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO3 template layer with superior piezoelectric coefficients (e31

Science

334

2011

00368075

cited By 262

Ramesh Lab